FDP047AN08A0
Manufacturer:
On Semiconductor
Mfr.Part #:
FDP047AN08A0
Datasheet:
Description:
MOSFETs TO-220AB-3 Through Hole N-Channel number of channels:1 310 W 75 V Continuous Drain Current (ID):80 A 92 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 75 V |
| Length | 10.67 mm |
| Width | 4.83 mm |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 4.7 MΩ |
| Height | 9.4 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | 80 A |
| Lifecycle Status | NRND (Last Updated: 2 months ago) |
| Max Power Dissipation | 310 W |
| Power Dissipation | 310 W |
| Number of Channels | 1 |
| Input capacitance | 6.6 nF |
| Continuous Drain Current (ID) | 80 A |
| Rds On Max | 4.7 mΩ |
| Drain to Source Voltage (Vdss) | 75 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 18 ns |
| Turn-Off Delay Time | 40 ns |
| Element Configuration | Single |
| Fall Time | 45 ns |
| Rise Time | 88 ns |
| Gate Charge | 92 nC |
| Drain to Source Resistance | 4 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 75 V |
| Manufacturer Lifecycle Status | ACTIVE, NOT REC (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 4 V |
Stock: 250
Distributors
pcbx
pcbxUnit Price$2.76528
Ext.Price$2.76528
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $2.76528 | $2.76528 |
| 10 | $2.21456 | $22.14560 |
| 25 | $1.77352 | $44.33800 |
| 50 | $1.42033 | $71.01650 |
| 100 | $1.29025 | $129.02500 |
| 300 | $1.17072 | $351.21600 |
| 500 | $1.06227 | $531.13500 |
| 1000 | $0.98905 | $989.05000 |